InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
- 5 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (19), 1998-2000
- https://doi.org/10.1063/1.103989
Abstract
Strained InAs/InP single quantum wells of nominal thickness 1–11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1–3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single‐line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island‐like features on the sample surface was attributed to the onset of three‐dimensional (island) growth.Keywords
This publication has 23 references indexed in Scilit:
- Critical layer thickness in strained Ga1−xInxAs/InP quantum wellsApplied Physics Letters, 1989
- Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfacesApplied Physics Letters, 1989
- Valence band engineering in strained-layer structuresSemiconductor Science and Technology, 1989
- Highly Strained InAsxPl-X/InP Quantum wells Prepared by Flow Modulation EpitaxyMRS Proceedings, 1989
- Strained-layer Ga1−xInxAs/InP avalanche photodetectorsApplied Physics Letters, 1988
- High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxyApplied Physics Letters, 1988
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Type-I to type-II superlattice transition in strained layers of As grown on InPPhysical Review Letters, 1988
- Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxyApplied Physics Letters, 1986
- Novel material properties of strained-layer superlatticesJournal of Vacuum Science & Technology A, 1985