Semiconductor surface passivation
- 1 January 1988
- journal article
- review article
- Published by Elsevier in Materials Science Reports
- Vol. 3 (3-4), 139-216
- https://doi.org/10.1016/s0920-2307(88)80008-2
Abstract
No abstract availableKeywords
This publication has 242 references indexed in Scilit:
- Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substratesJournal of Crystal Growth, 1982
- Interface characteristics of Ge3N4-(n-type) GaAs MIS devicesSolid-State Electronics, 1981
- Determination of distributed fixed charge in CVD-oxide and its virtual elimination by use of HClSolid-State Electronics, 1979
- GaAs-MOS capacitor with native oxide film anodized in nonaqueous electrolyteSolid-State Electronics, 1978
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Analysis of an InAs thin film transistorSolid-State Electronics, 1968
- Drift phenomena in CdSe thin film FET'sSolid-State Electronics, 1967
- The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structuresSolid-State Electronics, 1967
- Orientation dependence of surface charge on anodized InSbSolid-State Electronics, 1967
- Behavior of CdS thin film transistorsSolid-State Electronics, 1964