The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structures
- 30 September 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (9), 897-905
- https://doi.org/10.1016/0038-1101(67)90003-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965
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