Low-Temperature Growth of InN Films on (111)GaAs Substrates
- 1 May 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (5A), L490-491
- https://doi.org/10.1143/jjap.38.l490
Abstract
InN films have been grown on (111)GaAs substrates by radio frequency magnetron sputtering. It is revealed that epitaxial InN films with wurtzite structure can be obtained at a growth temperature as low as 100°C. InN grown directly on (111)GaAs is highly oriented in the c-plane, but lacks in-plane uniformity. A buffer layer formed by presputtering the substrate in nitrogen plasma can significantly improve the in-plane orientation, producing single-crystal InN.Keywords
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