Electron transport in wurtzite indium nitride

Abstract

We present the velocity-field characteristics of wurtzite indium nitride, determined using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high peak drift velocity at room temperature, ${\text{4.3×10}}^7\hspace{0.17em}\mathrm{cm/s},$ at a doping concentration of ${\text{1.0×10}}^{17}\hspace{0.17em}{\mathrm{cm}}^{\mathrm{-3}}.$ We also demonstrate that the saturation drift velocity of indium nitride, ${\text{2.5×10}}^7\hspace{0.17em}\mathrm{cm/s},$ is comparable to that of gallium nitride, and much larger than that of gallium arsenide. Our results suggest that the transport characteristics of indium nitride are superior to those of gallium nitride and gallium arsenide, over a wide range of temperatures, from 150 to 500 K, and doping concentrations, up to ${\text{1.0×10}}^{19}\hspace{0.17em}{\mathrm{cm}}^{\mathrm{-3}}.$ Hence, indium nitride has considerable potential for device applications.