Graphene-based flexible and stretchable thin film transistors
- 31 May 2012
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 4 (16), 4870-4882
- https://doi.org/10.1039/c2nr30994g
Abstract
Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.This publication has 113 references indexed in Scilit:
- Inkjet-Printed Graphene ElectronicsACS Nano, 2012
- Flexible Gigahertz Transistors Derived from Solution-Based Single-Layer GrapheneNano Letters, 2012
- Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device ApplicationNano Letters, 2012
- Sub-100 nm Channel Length Graphene TransistorsNano Letters, 2010
- High-speed graphene transistors with a self-aligned nanowire gateNature, 2010
- Graphene Monolayers: Chemical Vapor Deposition Repair of Graphene Oxide: A Route to Highly‐Conductive Graphene Monolayers (Adv. Mater. 46/2009)Advanced Materials, 2009
- A curvy, stretchy future for electronicsProceedings of the National Academy of Sciences, 2009
- A self-consistent theory for graphene transportProceedings of the National Academy of Sciences, 2007
- Contact resistance extraction in pentacene thin film transistorsSolid-State Electronics, 2002
- Contact resistance in organic thin film transistorsSolid-State Electronics, 2002