Observation of dark line defects in GaP green LED’s under an external uniaxial stress
- 15 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (10), 591-592
- https://doi.org/10.1063/1.88575
Abstract
Dark line defects (DLD’s) have been observed in GaP green LED’s under an external mechanical stress. Excitation of minority carriers is essential to DLD formation. DLD is revealed to grow along the 〈110〉 direction and to correspond to an array of dislocation etch pits. A ’’traveling dark spot’’ was observed for the first time. It moves as fast as 1 mm/sec and becomes trapped at the edge of DLD, which results in DLD growing. DLD generation depends on both the forward current magnitude and external stress.Keywords
This publication has 8 references indexed in Scilit:
- Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxyJournal of Applied Physics, 1975
- Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaPApplied Physics Letters, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Degradation mechanism of (Al · Ga)As double-heterostructure laser diodesApplied Physics Letters, 1974
- Strain-induced degradation of GaAs injection lasersApplied Physics Letters, 1973
- DEGRADATION AND PASSIVATION OF GaP LIGHT-EMITTING DIODESApplied Physics Letters, 1971
- Bulk degradation of GaP red LEDsIEEE Transactions on Electron Devices, 1971
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960