Consideration on threshold current density of GaInAsP/InP surface emitting junction lasers
- 1 February 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (2), 302-309
- https://doi.org/10.1109/jqe.1986.1072955
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflectorElectronics Letters, 1985
- Two-dimensional array of GaInAsP/InP surface-emitting lasersElectronics Letters, 1985
- Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laserElectronics Letters, 1984
- GaInAsP/InP surface emitting injection lasers with short cavity lengthIEEE Journal of Quantum Electronics, 1983
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- Surface-emitting GaInAsP/InP injection laser with short cavity lengthElectronics Letters, 1982
- GaInAsP/InP Surface Emitting Injection Laser with Buried HeterostructuresJapanese Journal of Applied Physics, 1981
- Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical CircuitsJapanese Journal of Applied Physics, 1980
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE FurnaceJapanese Journal of Applied Physics, 1977