Resistive switching in transition metal oxides
Top Cited Papers
Open Access
- 20 May 2008
- journal article
- review article
- Published by Elsevier in Materials Today
- Vol. 11 (6), 28-36
- https://doi.org/10.1016/s1369-7021(08)70119-6
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Observation of electric-field induced Ni filament channels in polycrystalline NiOx filmApplied Physics Letters, 2007
- First-principles modeling of resistance switching in perovskite oxide materialApplied Physics Letters, 2006
- Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transitionPhysical Review B, 2005
- Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2004
- Electric-pulse-induced reflectance change in the thin film of perovskite manganiteApplied Physics Letters, 2004
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000
- Magnetic-field-induced metal-insulator phenomena in with controlled charge-ordering instabilityPhysical Review B, 1996
- Bistable switching in electroformed metal–insulator–metal devicesPhysica Status Solidi (a), 1988
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Switching properties of thin Nio filmsSolid-State Electronics, 1964