Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

Abstract

We have characterized the vertical transport properties of epitaxial layered structures composed of Pr 0.7 Ca 0.3 Mn O 3 ( PCMO ) sandwiched between Sr Ru O 3 ( SRO ) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au,Ag, and Ti. Among the layered structures, Ti ∕ PCMO ∕ SRO is distinct due to a rectifying I – V characteristic with a large hysteresis. Corresponding to the hysteresis of the I – V characteristics, the contact resistance of the Ti ∕ PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti ∕ PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.