Relationship between gate lag, power drift, and power slump of pseudomorphic high electron mobility transistors
- 1 August 1999
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (8), 1325-1331
- https://doi.org/10.1016/s0038-1101(99)00070-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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