Control of porous Si photoluminescence through dry oxidation
- 3 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5), 633-635
- https://doi.org/10.1063/1.106576
Abstract
We demonstrate the applicability of thermal oxidation to control the photoluminescence (PL) from quantum-sized structures in porous silicon. Uniform photoluminescence samples with intense visible light observed under ultraviolet light at room temperature were quickly obtained without a long time hydrofluoric acid (HF) immersion. Applying different oxidation times or temperatures provides a very practical technique to control the luminescence color. By this way, we have observed a shift in the luminescence peak from 7600 to 6200 Å and a reduction in the spectral width from ∼1600 to ∼950 Å.Keywords
This publication has 17 references indexed in Scilit:
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloysApplied Physics Letters, 1990
- A study of carbon-implanted silicon for light-emitting diode fabricationMaterials Science and Engineering B, 1989
- 1.3-μm light-emitting diode from silicon electron irradiated at its damage thresholdApplied Physics Letters, 1987
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Efficient visible luminescence from hydrogenated amorphous siliconPhysica B+C, 1983
- Photoluminescence and optical properties of plasma-deposited amorphous Si x C1–x alloysPhilosophical Magazine Part B, 1981
- Photoluminescence in the amorphous system SiOxJournal of Applied Physics, 1981
- Temperature dependence of the radiative recombination coefficient in siliconPhysica Status Solidi (a), 1974