1.3-μm light-emitting diode from silicon electron irradiated at its damage threshold
- 9 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19), 1509-1511
- https://doi.org/10.1063/1.98618
Abstract
We report 77‐K electroluminescence from an irradiated carbon‐rich silicon diode that has an internal quantum efficiency more than 103 times higher than that of band‐to‐band recombination in an unirradiated, but otherwise identical diode. This is achieved by creating optically active Cs‐SiI‐Cs complexes with room‐temperature electron bombardment at an energy between the displacement thresholds for single vacancy and divacancy formation. Under these irradiation conditions, it is possible to create a high concentration of radiative defects without gross degradation of the diode’s electrical characteristics. The technique could provide very large scale integration‐compatible silicon light‐emitting diodes for 1.3–1.6 μm all‐silicon integrated optics.Keywords
This publication has 11 references indexed in Scilit:
- Optical interconnects replace hardwire: Light promises to relieve bottlenecks in electric interconnections from cabinet to cabinet, board to board, IC to IC — and even within chipsIEEE Spectrum, 1987
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Carbon in radiation damage centres in Czochralski siliconJournal of Physics C: Solid State Physics, 1984
- Photon generation in forward-biased silicon p-n junctionsIEEE Electron Device Letters, 1983
- Origin of the 0.97 eV luminescence in irradiated siliconPhysica B+C, 1983
- Non-radiative recombination and luminescence in siliconJournal of Luminescence, 1979
- The Dominant Recombination Centers in Electron‐Irradiated Semiconductors DevicesJournal of the Electrochemical Society, 1977
- The role of low temperatures in the operation of logic circuitryProceedings of the IEEE, 1970
- Radiative Recombination in Silicon p‐n JunctionsPhysica Status Solidi (b), 1969
- Radiation Resulting from Recombination of Holes and Electrons in SiliconPhysical Review B, 1956