Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
- 15 April 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8), 3163-3165
- https://doi.org/10.1063/1.333344
Abstract
Crystal growth of GaAs using trimethylgallium (TMG) as a Ga source in a molecular beam epitaxial system has been studied. Mirror‐like monocrystalline epitaxial layers of GaAs were easily obtained on a GaAs substrate at the substrate temperature of 530–630°C. Epitaxial layers were p type and the carrier concentration of these films was about 1018–1019 cm−3. In particular, no deposition was observed on a SiO2 film in this TMG‐As4 system. This feature showed the possibility of selective epitaxy of GaAs.Keywords
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