Se-doped GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R), 5510-5514
- https://doi.org/10.1143/jjap.34.5510
Abstract
Se-doped GaN films are grown for the first time by low-pressure metalorganic chemical vapor deposition (LP-MOCVD), in which H2Se is used as the Se source gas. Effects of Se doping on electrical properties of GaN films are reported. Se atoms tend to out-diffuse to the surface of the GaN film at high temperature. The N atomic percentage is influenced by the incorporation of H2Se in the MOCVD process. The carrier concentration was found to be significantly affected by the surface defects which develop at high H2Se dosages. The highest free electron concentration obtained is about 1.5×1018 cm-3. Increasing the growth temperature from 1000° C to 1050° C reduces the maximum carrier concentration to about 7×1017 cm-3.Keywords
This publication has 13 references indexed in Scilit:
- Prevention of substrate melt-back by Se addition during liquid phase epitaxial growth of GaAs on GaAs-coated SiMaterials Letters, 1994
- High electron mobility transistor based on a GaN-AlxGa1−xN heterojunctionApplied Physics Letters, 1993
- Low resistivity indium tin oxide films by pulsed laser depositionApplied Physics Letters, 1993
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- Si- and Ge-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1992
- Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctionsApplied Physics Letters, 1992
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1991
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989