Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C

Abstract

A pyrolytic Si₃N₄ encapsulation technique has been used to permit reproducible annealing of implanted GaAs at temperatures as high as 950 °C. At low doses, electrical activity ≳70% has been achieved for both Si and Se. At high doses, sheet carrier concentrations and sheet resistivities of 1.8×10¹⁴/cm² and 20 Ω/⧠, respectively, for Si and 7×10¹³/cm² and 44 Ω/⧠, respectively, for Se have been measured.