Monolithic integrated InxGa1−xAs Schottky-barrier waveguide photodetector
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1), 36-38
- https://doi.org/10.1063/1.1655268
Abstract
InxGa1−xAs Schottky‐barrier diodes for detection in the 0.9–1.06‐μm wavelength range have been incorporated in high‐purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 μm has been obtained for these detectors, and current gain has been observed.Keywords
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