Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes
- 1 February 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (3), 1134-1136
- https://doi.org/10.1063/1.338157
Abstract
Heteroepitaxial growth of 3C‐ and 6H‐silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C‐SiC(111) can be epitaxially grown on 6H‐SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.Keywords
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