Schottky barrier diodes on 3C-SiC
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8), 766-768
- https://doi.org/10.1063/1.95502
Abstract
Schottky barrier contacts have been made on n‐type 3C‐SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C‐SiC, good quality Schottky barrier junctions have been obtained. The barrier height determined by the capacitance measurements is 1.15 (±0.15) eV, while the height by the photoresponse measurements is 1.11 (±0.03) eV. These values are about a half of the energy band gap Eg at room temperature.Keywords
This publication has 6 references indexed in Scilit:
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- Evidence of space-charge-limited current in amorphous silicon Schottky diodesIEEE Electron Device Letters, 1980
- Surface-Barrier Diodes on Silicon CarbideJournal of Applied Physics, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964