Growth mechanism of In1−xGaxP and In1−xAlxP in metalorganic molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 171-175
- https://doi.org/10.1016/0022-0248(89)90375-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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