Room-Temperature Synthesis of ZnS:Mn Films by H2 Plasma Chemical Sputtering

Abstract

Thy hydrogen plasma chemical sputtering technique has been employed to deposit polycrystalline ZnS and ZnS:Mn films. The X-ray diffraction measurements and the electron probe X-ray microanalysis indicated that the highly crystallized ZnS films composed of near-stoichiometric ZnS grains were grown at 20°C in the pressure range from 300 Pa to 800 Pa, and the Mn-doped ZnS films were also deposited from the Mn-doped ZnS targets. The plasma state during the sputtering has been diagnosed by analyzing the spectral intensity emitted from Zn atoms. It is revealed that the growth rate is closely correlated with the optical emission from the Zn particles.