Epitaxial Growth of CdTe by H2 Sputtering

Abstract

CdTe films can be grown epitaxially on InSb(100) by chemical sputtering in H₂. The crystalline quality of the epitaxial layers is improved when the substrate temperatures are in the range of 200 to 250°C at a high rf discharge power of 400 W. In channeling experiments employing Rutherford backscattering spectrometry, the χ_min (aligned yield/random yield) in the film prepared at 270°C and 400 W is 9.5%. A lattice strain of 0.05% is obtained from the results of X-ray diffraction. These values show that the crystalline quality of the epitaxial film grown by H₂ sputtering is superior to the film grown by Ar sputtering.