On the Problem of Electron Capture Coefficients of the Group III Acceptors in Silicon
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 33 (2), 517-521
- https://doi.org/10.1002/pssb.19690330203
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Temperature and Stress Dependence of Electron Lifetime in-Type Semiconductors Between 1.5 and 4.2°KPhysical Review Letters, 1966
- Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium TemperaturesPhysical Review B, 1966
- Double-injection experiments in semi-insulating silicon diodesSolid-State Electronics, 1965
- On the mobility of photoexcited carriers in silicon at low temperaturesProceedings of the Physical Society, 1965
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950