High-resolution electron microscopy of structural features at the SiSiO2 interface
- 28 February 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (3), 94-98
- https://doi.org/10.1016/0167-577x(87)90083-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Two-step oxidation processes in siliconMaterials Letters, 1986
- Si/SiO2 interface roughness: Structural observations and electrical consequencesApplied Physics Letters, 1985
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Surface roughness scattering at the Si–SiO2 interfaceJournal of Vacuum Science & Technology B, 1983
- The structure of ultrathin oxide on siliconApplied Physics Letters, 1980