Graphite strip rapid isothermal annealing of tantalum silicide
- 15 August 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (4), 1242-1244
- https://doi.org/10.1063/1.334060
Abstract
Silicon-poor tantalum silicide films cosputtered on polycrystalline silicon over thermal oxide on silicon were rapidly annealed for various temperatures and times using a graphite strip heater. Rutherford backscattering and x-ray diffraction showed rapid formation of a stoichiometric tantalum disilicide via Si diffusion from the polycrystalline Si. This was accompanied by significant grain growth and a reduction in resistivity. Sheet resistances comparable with those of furnace-annealed samples were obtained.Keywords
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