CURRENT OSCILLATIONS IN Co-DOPED Si p-i-n STRUCTURES
- 15 September 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (6), 200-202
- https://doi.org/10.1063/1.1755096
Abstract
Current oscillations in the positive resistance region of the forward characteristics of Co‐doped Si p‐i‐n devices are described. The oscillations are sinusoidal, independent of device length, and are strongly affected by optical excitation and deep‐level trap properties.Keywords
This publication has 4 references indexed in Scilit:
- SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICONApplied Physics Letters, 1967
- Energy Levels and Negative Photoconductivity in Cobalt-Doped SiliconPhysical Review B, 1966
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELSApplied Physics Letters, 1963