Passivation of Si donors and D X centers in AlGaAs by hydrogen plasma exposure
- 6 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (14), 921-923
- https://doi.org/10.1063/1.97980
Abstract
The effect of hydrogen plasma exposure upon shallow donors and DX centers in silicon‐doped AlGaAs has been investigated by deep level transient spectroscopy and capacitance versus voltage measurements. Following exposure to a hydrogen plasma for 30 min at 250 °C, the shallow level and DX center activity are reduced by an order of magnitude throughout a 1.6‐μm‐thick layer of molecular beam epitaxially grown AlGaAs. Isochronal annealing studies showed that both the shallow donor and DX center electrical activity recover together at about 400 °C. The shallow donor recovery mimics the behavior of donors in GaAs and has an activation energy of 2.0 eV. The DX center recovery shows a distribution of activation energies centered at 2.1 eV with a full width at half‐maximum of 0.25 eV. The hydrogen passivation chemistry of DX centers and shallow donors support models in which isolated Si impurities give rise to both DX behavior and shallow levels.Keywords
This publication has 11 references indexed in Scilit:
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Theory of theDXcenter inAs and GaAs crystalsPhysical Review B, 1986
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1985
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977