New method for control of Schottky-barrier height
- 1 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1), 67-69
- https://doi.org/10.1063/1.92518
Abstract
Ultrathin reactive Al interlayers at ultrahigh vacuum‐cleaved Au‐CdS, CdSe single‐crystal interfaces have been used to continuously tune the effective Schottky‐barrier height over the full range reported for metals on these prototypical II‐VI semiconductors, i.e., 0–0.8 eV. Measured electrical transport properties are correlated with observed features of atomic interdiffusion chemistry and valence electronic structure.Keywords
This publication has 17 references indexed in Scilit:
- Barrier height control of Pd2 Si/Si schottky diodes using diffusion from doped PdSolid-State Electronics, 1980
- Atomic Modulation of Interdiffusion at Au-GaAs InterfacesPhysical Review Letters, 1980
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Crossover frequencies and turn-off time reduction scheme for twisted nematic liquid crystal displaysApplied Physics Letters, 1974
- Reducing the effective height of a Schottky barrier using low-energy ion implantationApplied Physics Letters, 1974
- High-efficiency InP transferred-electron oscillatorsElectronics Letters, 1974
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974
- Au-Ag Alloy-Silicon Schottky BarriersJapanese Journal of Applied Physics, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- METALS CONTACTS ON CLEAVED SILICON SURFACESAnnals of the New York Academy of Sciences, 1963