Cd-diffused Pb1−xSnxTe lasers with high output power

Abstract

Cd‐diffused Pb_1−xSn_xTe (x∼0.13) diode lasers have been fabricated with cw output powers of 1.25 mW (single mode) and 2.4 mW (total) at 10.6 μm. These power levels are attributed to the low‐temperature Cd diffusion, a new method of growing low‐dislocation‐density crystals, and to a contact resistance as low as 3×10⁻⁵ Ω cm². Multimode emission spectra are common for cw operation, but reducing the cavity width encourages single‐mode emission, indicating the filamentary nature of modes in these devices.