Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer
- 27 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (4), 490-492
- https://doi.org/10.1063/1.118190
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 Buffer LayerJapanese Journal of Applied Physics, 1994
- Spontaneous polarization screening in a single domain ferroelectricFerroelectrics, 1993
- Pb(Zr, Ti)O3 thin film growth on yttrium-treated Si(100)Integrated Ferroelectrics, 1993
- Growth and the microstructural and ferroelectric characterization of oriented BaMgF/sub 4/ thin filmsIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991
- Characteristics of Metal/PZT/p—Si MIS CapacitorsMRS Proceedings, 1990
- Memory retention and switching behavior of metal-ferroelectric-semiconductor transistorsFerroelectrics, 1976
- Ferroelectric field-effect memory device using Bi4Ti3O12 filmJournal of Applied Physics, 1975
- Depolarization-Field-Induced Instability in Thin Ferroelectric Films—Experiment and TheoryPhysical Review B, 1973
- Polarization Instability in Thin Ferroelectric FilmsPhysical Review Letters, 1973