Crystallographic polarity and etching of cadmium telluride
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8), 4668-4670
- https://doi.org/10.1063/1.332626
Abstract
This paper resolves the inconsistency in the literature on the determination of the polarity of CdTe and CdxHg1−xTe from their etching behavior. The etch (H2O:H2O2:HF, 2:2:3 v/v) has been shown to reveal pits on the Cd (111) A face and not on the Te (1̄1̄1̄) B face in contradiction to the previously published work of Warekois, Lavine, Mariano, and Gatos [J. Appl. Phys. 33, 690 (1962)] and Nakagawa, Maeda, and Takeuchi [Appl. Phys. Lett. 34, 574 (1979)]. This result agrees with the observations of Fewster, Cole, Willoughby, and Brown [J. Appl. Phys. 52, 4568 (1981)] for CdxHg1−xTe grown epitaxially on CdTe.Keywords
This publication has 3 references indexed in Scilit:
- Crystallographic polarity and chemical etching of CdxHg1−xTeJournal of Applied Physics, 1981
- Observation of dislocations in cadmium telluride by cathodoluminescence microscopyApplied Physics Letters, 1979
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962