Heat of crystallization and melting point of amorphous silicon
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8), 698-700
- https://doi.org/10.1063/1.94077
Abstract
Thin layers of amorphous silicon (a‐Si) were produced by noble gas ion implantation of (100) substrates held at 77 K. Rutherford backscattering and channeling, and differential scanning calorimetry were used to measure the heat of crystallization, ΔHac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling ΔHac of a‐Ge. The crystal growth velocity is found to have the form v=v0 exp(−2.24 eV/kT). We obtain a new estimate, 1420 K, for the melting temperature of a‐Si.Keywords
This publication has 16 references indexed in Scilit:
- Kinetics of laser-induced solid phase epitaxy in amorphous silicon filmsJournal of Applied Physics, 1982
- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafersJournal of Applied Physics, 1980
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- On the configurational entropy of amorphous Si and GePhilosophical Magazine, 1974
- Amorphous germanium II. Structural propertiesAdvances in Physics, 1973
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Theory of the Third-Order Elastic Constants of Diamond-Like CrystalsPhysical Review B, 1966