Reduction of the effective height of metal–n-InP Schottky barriers using thin epitaxial layers
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7), 348-350
- https://doi.org/10.1063/1.89395
Abstract
Reduction of the effective height of metal–n‐InP Schottky barriers from 0.4 to 0.24 eV has been achieved by utilizing thin epitaxial n+ surface layers which are fully depleted at zero bias. A novel ’’ramp‐etching’’ technique has been used to investigate the effect of n+ thickness on current‐voltage characteristics and shows that further effective reductions are possible using thicker n+ layers which are not depleted at zero bias. Low height barriers of this type have applications in high‐efficiency transferred electron microwave oscillators.Keywords
This publication has 3 references indexed in Scilit:
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- Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPJournal of Physics D: Applied Physics, 1973
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969