SiOx/TaOx Gate Insulator a-Si TFT for Liquid Crystal Displays

Abstract

A double layer of anodized TaO _x and plasma CVD SiO _x was applied to the gate insulator for an a-Si TFT active matrix LCD. This double layer was effective in eliminating interlayer short circuits between address bus lines and data bus lines in an LCD. No deterioration was observed in the TFT characteristics or the reliability upon adding a TaO _x layer to a SiO _x gate insulator. An LCD with no interlayer short circuits has been fabricated with this double layer.