Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors

Abstract

A new low-temperature method of thermal-oxidation for amorphous-silicon has been proposed, and preliminary experimental results on its application to amorphous-silicon MOS transistors are presented. The resistivity of the oxide was over 10¹⁴ Ωcm and the field-effect mobility deduced from the saturation region of the transistor characteristics was 0.003 cm²/Vs.