Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films
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- 28 September 2011
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 23 (45), 5377-5382
- https://doi.org/10.1002/adma.201102254
Abstract
Domain wall conduction in insulating Pb(Zr0.2Ti0.8)O3 thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time.Keywords
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This publication has 30 references indexed in Scilit:
- Conduction through 71° Domain Walls inThin FilmsPhysical Review Letters, 2011
- Domain Wall Conductivity in La-DopedPhysical Review Letters, 2010
- Landau theory of domain wall magnetoelectricityPhysical Review B, 2010
- Multiferroic Domain Boundaries as Active Memory Devices: Trajectories Towards Domain Boundary EngineeringChemphyschem, 2010
- First-principles study of ferroelectric domain walls in multiferroic bismuth ferritePhysical Review B, 2009
- Physics and Applications of Bismuth FerriteAdvanced Materials, 2009
- A way forward along domain wallsNature Materials, 2009
- Conduction at domain walls in oxide multiferroicsNature Materials, 2009
- Nanoscale Control of Exchange Bias with BiFeO3 Thin FilmsNano Letters, 2008
- Structure of a ferroelectric and ferroelastic monodomain crystal of the perovskite BiFeO3Acta crystallographica Section B, Structural science, crystal engineering and materials, 1990