Potential material for electroluminescence devices in the visible region

Abstract

High intensity photoluminescence response has been observed in the visible region (λ=600 nm) in a diluted magnetic semiconductor system Zn_1−xMn_xS (0.05≤x≤0.4) at 300 and 77 K for the first time. The temperature and concentration independent position of the observed peak can be attributed to the intraionic transition of Mn⁺⁺. Considering the crystal field splitting parameter and Racah’s coefficient and using the diagram proposed by Y. Tanabe and S. Sugano [J. Phys. Soc. Jpn. 9, 753 (1954)], the luminescence transition responsible for the observed peak was found to be 4T₁–6A₁. On the basis of high luminescence response, Zn_1−xMn_xS could be a promising material for electroluminescence devices in the range where photopic response of the human eye is nearly maximum.