Calculation of intrinsic carrier concentration in Hg1−xCdxTe
- 1 March 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (3), 1639-1640
- https://doi.org/10.1063/1.332153
Abstract
Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg. An expression fitted to these calculations is: ni[5.585−3.820x+1.753(10−3)T −1.364(10−3)xT] ×(1014)E3/4gT3/2 exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculated ni for the range Eg>0, 50<Txni obtained from Hall measurements.Keywords
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