Thin Film Growth of YBa2Cu3O7-x by ECR Oxygen Plasma Assisted Reactive Evaporation

Abstract
A new apparatus equipped with an ECR oxygen plasma source, a co-evaporation system of Y, Ba and Cu and a differential pumping system was developed. YBa2Cu3O7-x superconducting films were obtained at a substrate temperature of 450–500°C. The critical temperatures of films deposited on SrTiO3, MgO and Si substrates were 87 K, 80 K and 63 K, respectively. These properties were closely related to the crystallinity of the film.
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