Surface controlled InP-MIS (metal-insulator-semiconductor) triodes
- 1 May 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5), 3498-3503
- https://doi.org/10.1063/1.329127
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InPThin Solid Films, 1979
- Characteristics and potential applications of GaAs1-xPx MIS structuresSolid-State Electronics, 1974
- Theory and experiments on an electroluminescent device constructed in the metal-insulator—Semiconductor geometryIEEE Transactions on Electron Devices, 1969
- ELECTROLUMINESCENCE USING GaAs MIS STRUCTURESApplied Physics Letters, 1966