A study of charge trapping in the Al-Al2O3-Si, MIS system
- 29 February 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (2), 101-107
- https://doi.org/10.1016/0038-1101(80)90143-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Properties of Al2 O 3 Films Deposited from the AlCl3, CO 2, and H 2 SystemJournal of the Electrochemical Society, 1978
- Trapping Effects in Irradiated and Avalanche-Injected MOS CapacitorsIEEE Transactions on Nuclear Science, 1978
- Optically induced injection of hot electrons into SiO2Journal of Applied Physics, 1974
- Nonavalanche injection of hot carriers into SiO2Journal of Applied Physics, 1973
- Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl3-CO2-H2SystemJapanese Journal of Applied Physics, 1972
- The Effects of Heat Treatment on the Interface Characteristics in the Si-Al2O3and Si-SiO2-Al2O3SystemsJapanese Journal of Applied Physics, 1972