SDW MOSFET static memory cell
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 16 (2), 80-85
- https://doi.org/10.1109/jssc.1981.1051545
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Single-device-well MOSFET'sIEEE Transactions on Electron Devices, 1981
- A 2Kx8-bit static MOS RAM with a new memory cell structureIEEE Journal of Solid-State Circuits, 1980
- A novel single-device-well MOSFET gatePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- A new circuit configuration for a static memory cell with an area of 880 /spl mu/m/sup 2/IEEE Journal of Solid-State Circuits, 1978
- Dual depletion CMOS (D/sup 2/CMOS) static memory cellIEEE Journal of Solid-State Circuits, 1977
- Lambda diodes utilizing an enhancement-depletion CMOS/SOS processIEEE Transactions on Electron Devices, 1977
- Complementary JFET negative-resistance devicesIEEE Journal of Solid-State Circuits, 1975
- MOS threshold shifting by ion implantationSolid-State Electronics, 1973