Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

Abstract

An overview of the existing two-dimensional carrier profiling tools using scanning probe microscopy includes several scanning tunneling microscopy modes, scanning capacitance microscopy, Kelvin probe microscopy, scanning spreading resistance microscopy, and dopant selective etching. The techniques are discussed and compared in terms of the sensitivity or concentration range which can be covered, the quantification possibility, and the final resolution, which is influenced by the intrinsic imaging resolution as well as by the response of the investigated property to concentration gradients and the sampling volume. From this comparison it is clear that, at present, none of the techniques fulfills all the requirements formulated by the 1997 Semiconductor Industry Association roadmap for semiconductors [National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1997)]. Most methods are limited to pn-junction delineation or provide a semiquantitative image of the differently doped regions. However, recent comparisons have shown that the techniques can provide useful information, which is not accessible with any other method.