Epitaxial growth of deposited amorphous layer by laser annealing
- 15 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (2), 130-131
- https://doi.org/10.1063/1.90280
Abstract
We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single‐crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.Keywords
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