Solid phase epitaxy in silicide-forming systems
- 1 December 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 47 (3), 313-322
- https://doi.org/10.1016/0040-6090(77)90046-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Structural investigation of silicon epitaxial layers grown by solid state reactionsThin Solid Films, 1977
- Heterostructure by solid-phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) systemJournal of Applied Physics, 1977
- Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) systemApplied Physics Letters, 1976
- Solid-state growth of Si to produce planar surfacesJournal of Applied Physics, 1976
- Antimony doping of Si layers grown by solid-phase epitaxyApplied Physics Letters, 1976
- Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial GrowthJournal of the Electrochemical Society, 1975
- Solid-phase epitaxial growth of Si through palladium silicide layersJournal of Applied Physics, 1975
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Solid-phase epitaxial growth of Ge layersPhysica Status Solidi (a), 1972
- Stability of Solid Phases in the Ternary Systems of Silicon and Carbon with Rhenium and the Six Platinum MetalsJournal of the American Ceramic Society, 1962