GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current
Open Access
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (3), 126-128
- https://doi.org/10.1109/55.215133
Abstract
The first known p-channel GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As HFETs on InP are reported. The devices, using a strained-layer GaAs/sub x/Sb/sub 1-x/ channel, have achieved extrinsic transconductances of 40 mS/mm and intrinsic transconductances of 100 mS/mm. In addition to high transconductance, the devices exhibit excellent pinchoff and demonstrate a record gate turn-on voltage of -3 V as a result of extremely low gate leakage currents, making them exceptional candidates for complementary technologies. These outstanding gate characteristics are attributed to the valence band-edge discontinuity of 0.64 eV.Keywords
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