Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
- 3 August 1986
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 174 (1-3), 65-70
- https://doi.org/10.1016/0039-6028(86)90386-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
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- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981