SiO2 ultra thin film growth kinetics as investigated by surface techniques
- 1 June 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 118 (1-2), 32-46
- https://doi.org/10.1016/0039-6028(82)90011-5
Abstract
No abstract availableThis publication has 54 references indexed in Scilit:
- Oxidation of Si surfacesJournal of Applied Physics, 1975
- Kinetics of the Thermal Oxidation of Silicon in O 2 / N 2 Mixtures at 1200°CJournal of the Electrochemical Society, 1975
- Oxidation of n-Type Silicon in the 10–1400-Å Oxide Thickness RangeJournal of Applied Physics, 1972
- Formation of Ultrathin Oxide Films on SiliconJournal of the Electrochemical Society, 1972
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Formation of 20–25Å Thermal Oxide Films on Silicon at 950°–1140°CJournal of the Electrochemical Society, 1971
- Thin Tunnelable Layers of Silicon Dioxide Formed by Oxidation of SiliconJournal of the Electrochemical Society, 1970
- Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effectsJournal of Physics and Chemistry of Solids, 1969
- Kinetics of Thermal Growth of Silicon Dioxide Films in Water Vapor-Oxygen-Argon MixturesJournal of the Electrochemical Society, 1966
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965