Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe
- 1 July 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (7B), L1021-1023
- https://doi.org/10.1143/jjap.32.l1021
Abstract
It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of OKLL Auger electrons and SiLVV Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.Keywords
This publication has 6 references indexed in Scilit:
- Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditionsApplied Physics Letters, 1992
- Nanolithography of chemically prepared Si with a scanning tunneling microscopeApplied Physics Letters, 1991
- Nanolithography on semiconductor surfaces under an etching solutionApplied Physics Letters, 1990
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990
- Direct writing of 10 nm features with the scanning tunneling microscopeApplied Physics Letters, 1988
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962