Difference between the (001) facet and the vicinal planes in vapour phase epitaxial growth of GaAs
- 1 May 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 22 (3), 175-180
- https://doi.org/10.1016/0022-0248(74)90091-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The facet effect in epitaxial GaAsSolid State Communications, 1967
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- The Effect of Orientation on the Electrical Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1964